Resist evaluation system

Photo-process analysis equipment　

The photo-process analysis and exposure system is an exposure system for photoresist research and development.
The step exposure mechanism enables flat exposures while allowing the user to vary 25 parameters. The development analysis of the exposed sample with the resist development analyzer (RDA) accelerates photoresist material and process development. In addition, the optional outgas collection unit allows analysis of the composition of the outgas generated from the resist being exposed.

Exposure equipment for g, h, i-line, 248nm(KrF) and broadband

UVES-2000

　　

The UVES-2000 is a flat exposure equipment designed for experimental applications.
It's equipped with an Hg-Xe lamp to support exposure by emissions filtered at 248 nm, 365 nm, 405 nm, and 436 nm and broadband exposures.

　　

Exposure wavelength:   248nm, 365nm, 405nm, 436nm and broadband
Illuminance:                 5mW/cm²
Exposure area:             10mm square area/25 shots


Option: The addition the function of ABC parameter measuring
　　　　The addition the function of the outgassing trap
 

UVES-2000

Analysis software


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Exposure equipment series catalogue


Exposure equipment for g, h, i-line, 248nm(KrF) and broadband　(high-illuminance/automatic sample transport model)

UVES-2500

　　

The UVES-2500 is a high-illuminance, automatic transfer model based on the UVES-2000.

　　

Exposure wavelength:   248nm, 365nm, 405nm, 436nm and broadband
Illuminance:                 50mW/cm²
Exposure　area:            10mm square area/25 shots

 

Option: The addition the function of ABC parameter measuring
           The addition the function of the outgassing trap

UVES-2500

UVES-2500 catalogue


Exposure equipment for 193nm(ArF)

ArFES-3000

　　

The ArFES-3000 is a flat exposure equipment designed for experimental applications.
It incorporates an ArF excimer laser for exposures at 193 nm.

　　

Exposure wavelength:    193nm
Illuminance:                  1mW/cm²
Exposure　area:             10mm square area/25 shots

 

Option: The addition the function of ABC parameter measuring
　　　   The addition the function of the outgassing trap

ArFES-3000

Exposure equipment series catalogue


Electron beam exposure equipment

EBES-6000

　　

The EBES-6000 is equipped with an electron gun (E-gun) to support electron beam exposures with varied acceleration voltage.

　　

Exposure source:         electron beam
Illuminance:                 1μC/cm²
Acceleration voltage:    1 to 100 keV (1keV step)
Exposure area:             5mm square area/9 shots
 

EBES-6000


Exposure equipment for EUV

EUVES-7000

　　

The EUVES-7000 is equipped with a discharge extreme ultraviolet light source (EUV light source; manufactured by Energetiq Technology Inc.) and supports exposures at 13.5 nm.

　　

Exposure wavelength:   13.5nm
Illuminance:                 0.03mW/cm²
Exposure　area:            10mm square area/12 shots

 

Option: The addition the function of ABC parameter measuring
            The addition the function of residual gas analysis

EUVES-7000

Sample after exposure


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Exposure equipment series catalogue


Exposure equipment for EUV (automatic wafer transfer model)

EUVES-9000

　　

The EUVES-9000 is an automatic transfer model based on the EUVES-7000. It’s equipped with a PEB hot plate for prompt PEBs after exposure. It also features a residual gas analysis (RGA) function as part of the standard configuration for effective outgases analysis during development.

　　

Exposure wavelength:     13.5nm
Illuminance:                  0.03mW/cm²
Exposure　area:             10mm square area/12 shots

 

Option: The addition the function of B parameter measuring

EUVES-9000


Outgassing evaluation equipment from EUV resists

EUVOM-9000

　　

Observations of contamination growth (CG) allow quantitative evaluations of outgassing from the EUV resist. This system uses an electron beam instead of an extreme ultra violet light source (EUV light source). It is normally used to evaluate outgassing from EUV resists.

　　

Exposure source:   Electron beam
Illuminance:           0.1 to 5μC/cm²
Exposure area:      Multiple concentric circles on a 300 mm wafer
CG area:               φ2mm
 

EUVOM-9000


UV ozone dry cleaner for EUV mirror

LUVC-5000

　　

The LUVC-5000 is equipped with a 148-nm low-pressure mercury lamp for substrate dry cleaning.
The LUVC-5000 is ideal for dry cleaning EUV reflection mirrors.

　　

Irradiation wavelength:    148nm (for generate ozone)
Illuminance:                   50mW/cm²
Irradiation area:              φ50mm

LUVC-5000

Inner layout


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