1 |
![論文pdf-1](COVER/paper_24.jpg) |
Improved Resolution of Thick Film Resist(Effect of Pre-Bake Condition)
[SPIE] |
2 |
![論文pdf-2](COVER/paper_23.jpg) |
Improved Resolution of Thick Film Resist(Effect of Development Technique)
[SPIE] |
3 |
![論文pdf-3](COVER/paper_22.jpg) |
Study on Improved Resolution of Thick Film Resist(Verification by Simulation)
[SPIE] |
4 |
![論文pdf-4](COVER/paper_21.jpg) |
厚膜レジストにおけるプリベーク条件が解像性に与える影響
[電子情報通信学会] |
5 |
![論文pdf-5](COVER/paper_20.jpg) |
厚膜レジストにおける現像方法の違いによる解像性の検討
[電子情報通信学会] |
6 |
![論文pdf-6](COVER/paper_19.jpg) |
厚膜レジストの高解像化に関する検討
[電子情報通信学会] |
7 |
![論文PDF-7](COVER/paper_18.jpg) |
In-situ Measurement of Outgassing from Chemically Amplified Resist during Exposure to 248nm Light [Journal of Photopolymer Science and Technology] |
8 |
![論文pdf-8](COVER/paper_17.jpg) |
Study of De-protection Reactions for Chemically Amplified Resist
[Journal of Photopolymer Science and Technology] |
9 |
![論文pdf-9](COVER/paper_16.jpg) |
Study of Deprotection Reaction during Exposure in Chemically Amplified Resist for Lithography Simulation [Journal of Photopolymer Science and Technology] |
10 |
![論文pdf-10](COVER/paper_15.jpg) |
Analysis of Deprotection Reaction for Chemically Amplified Resists by Using FT-IR Spectrometer with Exposure Tool
[SPIE] |
11 |
![論文pdf-11](COVER/paper_14.jpg) |
Measurements of Parameters for Simulation of Deep UV Lithography Using a FT-IR Baking System [SPIE] |
12 |
![論文pdf-12](COVER/paper_13.jpg) |
Analysis of Deprotection Reaction in Chemically Amplified Resists Using an Fourier Transform Infrared Spectrometer with an Exposure Tool [Japanese Journal of Applied Physics] |
13 |
![論文pdf-13](COVER/paper_12.jpg) |
Measurement of Parameters for Simulation of 193nm Lithography Using Fourier Transform Infrared Baking System
[Japanese Journal of Applied Physics] |
14 |
![論文pdf-14](COVER/paper_11.jpg) |
Study of Proximity Lithography Simulations Using Measurements of Dissolution Rate and Calculation of the Light Intensity Distributions in the Photoresist
[SPIE] |
15 |
![論文pdf-15](COVER/paper_10.jpg) |
Development of Analysis System for F2-Excimer Laser Photochemical Processes
[SPIE] |
16 |
![論文pdf-16](COVER/paper_09.jpg) |
Resist Metrology for Lithography Simulation, Part 2: Development Parameter Measurements
[SPIE] |
17 |
![論文pdf-17](COVER/paper_07.jpg) |
Approach for High-resolution of Chemically Amplified Resists Using Rate Editor Software
[The Japan Society of Applied Physics] |
18 |
![論文pdf-18](COVER/paper_07.jpg) |
Development of Photochemical Analysis System for F2-Excimer Laser Lithography Processes
[The Japan Society of Applied Physics] |
19 |
![論文pdf-19](COVER/paper_06.jpg) |
厚膜レジストにおける実測溶解速度を用いたプロキシミティ・リソグラフィ・シミュレーションの検討
[電気学会論文誌] |
20 |
![論文pdf-20](COVER/paper_05.jpg) |
ホトリソグラフィ用化学増幅レジストのシミュレーションパラメータの推算
[電子情報通信学会] |
21 |
![論文pdf-21](COVER/paper_04.jpg) |
P.E.B.プロセスにおけるホトレジストの感光剤の拡散長の推算
[電子情報通信学会] |
22 |
![論文pdf-22](COVER/paper_03.jpg) |
ホトレジスト現象パラメータ測定システムの開発
[電子情報通信学会] |
23 |
![論文pdf-23](COVER/paper_02.jpg) |
ホトレジストの感光パラメータ(A,B,C)測定装置の開発
[電子情報通信学会] |
24 |
![論文pdf-24](COVER/paper_01.jpg) |
ホトリソグラフィにおける実測溶解速度を用いたデフォーカスシミュレーションの検討
[電子情報通信学会] |